OPTIMUM SEMICONDUCTORS FOR HIGH-POWER ELECTRONICS

被引：464

作者：

SHENAI, K ^{[1
]}

SCOTT, RS ^{[1
]}

BALIGA, BJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1811 / 1823

页数：13

共 50 条

[11] KAPITZA,PL - HIGH-POWER ELECTRONICS
HULL, JF
ELECTRONICS, 1967, 40 (11): : 196 - &
[12] Toward gallium oxide power electronics Ultrawide-bandgap semiconductors show promise for high-power transistors
Tadjer, Marko J.
SCIENCE, 2022, 378 (6621) : 724 - 725
[13] IGCTs: High-Power Technology for Power Electronics Applications
Nistor, I.
Wikstroem, T.
Scheinert, M.
CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2009, : 65 - +
[14] The Cutting Edge of Power Electronics for High-Power Applications
Akagi, Hirofumi
2015 34TH CHINESE CONTROL CONFERENCE (CCC), 2015, : 9 - 17
[15] Concurrent thermal design for high-power electronics
Lall, BS
FOURTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, 1998, : 95 - 103
[16] MULTILAYER SUBSTRATE AIMS FOR HIGH-POWER ELECTRONICS
CHIN, S
ELECTRONIC PRODUCTS MAGAZINE, 1992, 34 (08): : 16 - +
[17] HIGH-POWER MICROWAVE COUPLING AND EFFECTS ON ELECTRONICS
FLORIG, HK
ANNALES DE PHYSIQUE, 1989, 14 (06) : 101 - 118
[18] Beginning of the high-power microwave electronics in Kiev
Kasatkin, L.V.
Rapoport, G.N.
Taranenko, V.P.
Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 2003, 46 (11): : 3 - 9
[19] Optimum design of a high-power, high-frequency transformer
Petkov, R
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1996, 11 (01) : 33 - 42
[20] Chapter 5 SiC for Applications in High-Power Electronics
Brandt, C.D.
Clarke, R.C.
Siergiej, R.R.
Casady, J.B.
Sriram, S.
Agarwal, A.K.
Morse, A.W.
Semiconductors and Semimetals, 1998, 52 (0C): : 195 - 236

← 1 2 3 4 5 →