BORON-DIFFUSION INTO SI FROM CVD-BN

被引：0

作者：

KIM, C ^{[1
]}

SHONO, K ^{[1
]}

机构：

[1] SOPHIA UNIV,FAC SCI & TECHNOL,DEPT ELECT & ELECTR ENGN,TOKYO 102,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C104 / C104

页数：1

共 50 条

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[47] ARSENIC AND BORON-DIFFUSION IN SILICON FROM IMPLANTED COBALT SILICIDE LAYERS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) :C318-C318

[50] EFFECTS OF STRAIN ON BORON-DIFFUSION IN SI AND SI1-XGEX (VOL 66, PG 580, 1995) [J].

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