PERSISTENT PHOTOCONDUCTIVITY AND RELATED CRITICAL PHENOMENA IN ZN0.3CD0.7SE

被引：67

作者：

JIANG, HX

LIN, JY

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.40.10025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10025 / 10028

页数：4

共 25 条

[1] INFLUENCE OF CLUSTERING ON THE MOBILITY OF III-V SEMICONDUCTOR ALLOYS [J].

BLOOD, P ;

GRASSIE, ADC .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1866-1868

[2] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[4] DOPING AND ANNEALING EFFECTS ON PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES [J].

CHOI, SH ;

YOO, BS ;

LEE, CC ;

JANG, J .

PHYSICAL REVIEW B, 1987, 36 (12) :6479-6485

[5] PERCOLATIVE ASPECTS IN PHOTOCONDUCTIVITY [J].

DOMES, H ;

LEYRER, R ;

HAARER, D ;

BLUMEN, A .

PHYSICAL REVIEW B, 1987, 36 (08) :4522-4524

[6] DONOR-ACCEPTOR RECOMBINATION KINETICS IN AN EXACTLY COMPENSATED CRYSTAL - A MONTE-CARLO CALCULATION [J].

EGGERT, JR .

PHYSICAL REVIEW B, 1984, 29 (12) :6669-6671

[7] MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES [J].

HUNDHAUSEN, M ;

LEY, L .

PHYSICAL REVIEW B, 1985, 32 (10) :6655-6662

[8] NEUTRAL DONOR-ACCEPTOR-PAIR RECOMBINATION UNDER A UNIFORM ELECTRIC-FIELD [J].

JIANG, HX .

PHYSICAL REVIEW B, 1988, 37 (08) :4126-4131

[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[10] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

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