CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING

被引：95

作者：

AOYAMA, T

KAWACHI, G

KONISHI, N

SUZUKI, T

OKAJIMA, Y

MIYATA, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1149/1.2096829

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1169 / 1173

页数：5

共 18 条

[1] THERMAL ANNEALING OF PLASMA CVD SILICON FILMS [J].

AOYAMA, T ;

ADACHI, E ;

KONISHI, N ;

SUZUKI, T ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :2049-2051

[2] STRUCTURE AND CRYSTAL-GROWTH OF ATMOSPHERIC AND LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON FILMS [J].

BISARO, R ;

MAGARINO, J ;

PROUST, N ;

ZELLAMA, K .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1167-1178

[3] SOLID-PHASE CRYSTALLIZATION KINETICS IN DOPED ALPHA-SI CHEMICAL-VAPOR-DEPOSITION FILMS [J].

BISARO, R ;

MAGARINO, J ;

ZELLAMA, K ;

SQUELARD, S ;

GERMAIN, P ;

MORHANGE, JF .

PHYSICAL REVIEW B, 1985, 31 (06) :3568-3575

[4]

GERMAIN PJ, 1983, MATER RES SOC S P, V13, P135

[5] GROWTH AND PHYSICAL-PROPERTIES OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

HARBEKE, G ;

KRAUSBAUER, L ;

STEIGMEIER, EF ;

WIDMER, AE ;

KAPPERT, HF ;

NEUGEBAUER, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) :675-682

[6] HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS [J].

HATALIS, MK ;

GREVE, DW .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :361-364

[7] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

[8] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :686-690

[9]

KLUNG HP, 1959, XRAY DIFFRACTION PRO

[10]

KUMAR K, 1984, IEEE T ELECTRON DEV, V31, P480

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