ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY

被引：69

作者：

GEIS, MW ^{[1
]}

SMITH, HI ^{[1
]}

TSAUR, BY ^{[1
]}

FAN, JCC ^{[1
]}

MABY, EW ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：158 / 160

页数：3

共 15 条

[11]

GEIS MW, 1981, 39TH ANN DEV RES C S

[12]

KENDALL DL, 1979, ANN REV MATER SCI, V9, P375

[13] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[14] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :561-563

[15] N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO2 [J].

TSAUR, BY ;

GEIS, MW ;

FAN, JCC ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

APPLIED PHYSICS LETTERS, 1981, 39 (11) :909-911

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