ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY

被引：69

作者：

GEIS, MW ^{[1
]}

SMITH, HI ^{[1
]}

TSAUR, BY ^{[1
]}

FAN, JCC ^{[1
]}

MABY, EW ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：158 / 160

页数：3

共 15 条

[1]

BEAM KE, 1978, IEEE T ELECTRON DEV, V25, P1185

[2]

BEZJIAN K, UNPUB

[3]

Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[4] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[5] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY ND-YAG LASER-HEATING [J].

FAN, JCC ;

ZEIGER, HJ .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :224-226

[6]

FAN JCC, 1980, 14TH P IEEE PHOT SPE

[7]

GAT A, COMMUNICATION

[8] SUMMARY ABSTRACT - SILICON GRAPHOEPITAXY [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :229-230

[9] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[10] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456

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