MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT DEVICE

被引:17
作者
TAKAGI, T [1 ]
YAMADA, I [1 ]
SASAKI, A [1 ]
ISHIBASHI, T [1 ]
机构
[1] KYOTO UNIV, DEPT ELECTR, KYOTO, JAPAN
关键词
D O I
10.1109/T-ED.1973.17800
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1110 / 1114
页数:5
相关论文
共 5 条
[1]   DC ELECTROLUMINESCENCE IN ZNS(MN) THIN FILMS WITH CU-RICH LAYER [J].
INARI, T ;
TAKEDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (12) :802-&
[2]   MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT CELL [J].
TAKAGI, T ;
YAMADA, I .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (10) :1587-&
[3]   ELECTRON-BOMBARDMENT TYPE SIMPLIFIED SOURCE FOR HIGH-TEMPERATURE OPERATION AND PRODUCTION OF MULTIPLY-CHARGED IONS UTILIZING BEAM-PLASMA INTERACTIONS [J].
TAKAGI, T ;
YAMADA, I ;
ISHIKAWA, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (02) :142-&
[4]   ELECTROLUMINESCENCE MAINTENANCE [J].
THORNTON, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (11) :895-907
[5]   DIRECT CURRENT ELECTROLUMINESCENCE IN ZNS [J].
VECHT, A ;
WERRING, NJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (02) :105-&