HIGH-SPEED MICROWAVE SWITCHING UTILIZING BULK GAAS 1-XPX

被引：0
|
作者：
IMMORLIC.AA [1 ]
PEARSON, GL [1 ]
机构：
[1] STANFORD UNIV,STANFORD,CA
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1973年 / 18卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：298 / 299
页数：2
相关论文
共 50 条
  • [1] HIGH-SPEED BULK SEMICONDUCTOR MICROWAVE SWITCH UTILIZING GAAS1-XPX MIXED-CRYSTALS
    FOGGIATO, GA
    PEARSON, GL
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (04): : 456 - +
  • [2] EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES
    GROVES, WO
    HERZOG, AH
    CRAFORD, MG
    APPLIED PHYSICS LETTERS, 1971, 19 (06) : 184 - &
  • [3] HIGH-SPEED MICROWAVE SWITCHING OF SEMICONDUCTORS
    GARVER, RV
    SPENCER, EG
    LECRAW, RC
    JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) : 1336 - 1338
  • [4] HIGH-SPEED MICROWAVE SWITCHING DEVICES
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1976, 19 (01) : 23 - 23
  • [5] A MULTI-WAFER GROWTH SYSTEM FOR EPITAXIAL DEPOSITION OF GAAS AND GAAS 1-XPX
    BURD, JW
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1969, 245 (03): : 571 - &
  • [6] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES
    NUESE, CJ
    TIETJEN, JJ
    GANNON, JJ
    GOSSENBERGER, HF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 248 - +
  • [7] Characteristics of InGaAs quantum dots grown on tensile-strained GaAs 1-xPx
    Kim, N.H.
    Ramamurthy, P.
    Mawst, L.J.
    Kuech, T.F.
    Modak, P.
    Goodnough, T.J.
    Forbes, D.V.
    Kanskar, M.
    Journal of Applied Physics, 2005, 97 (09):
  • [8] High-speed combinatorial synthesis utilizing microwave irradiation
    Kappe, CO
    CURRENT OPINION IN CHEMICAL BIOLOGY, 2002, 6 (03) : 314 - 320
  • [9] HIGH-SPEED DIGITAL MICROWAVE TRANSMITTER UTILIZING OPTICAL MODULATION
    KIEHL, RA
    HIBRAY, RE
    PROCEEDINGS OF THE IEEE, 1978, 66 (06) : 708 - 709
  • [10] HIGH-SPEED 1 MUM GAAS MESFET
    KOHN, E
    WULLER, R
    STAHLMANN, R
    BENEKING, H
    ELECTRONICS LETTERS, 1975, 11 (08) : 171 - 172
12345