SUPPRESSION OF 3-DIMENSIONAL ISLAND NUCLEATION DURING GAAS GROWTH ON SI(100)

被引：67

作者：

CHOI, CH ^{[1
]}

AI, R ^{[1
]}

BARNETT, SA ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.67.2826

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Very-low-energy (almost-equal-to 28 eV), high-flux (almost-equal-to 0.4 mA/cm2) Ar-ion irradiation during molecular-beam epitaxy changed the nucleation or GaAs on Si(100) from Stranski-Krastanov to a mechanism approaching layer-by-layer growth. While three-dimensional island nucleation was eliminated, the growth surface exhibited low-amplitude undulations. The results are explained by ion-induced removal of atoms from stable 3D islands, which suppressed 3D island nucleation.

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页码：2826 / 2829

页数：4

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