TRANSIENT HEAT FLOW FROM AN EPITAXIAL LAYER INTO SUBSTRATE

被引:4
作者
MOSEKILDE, E
LEBWOHL, PA
CARLSON, DG
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1971年 / 59卷 / 06期
关键词
D O I
10.1109/PROC.1971.8322
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1030 / +
页数:1
相关论文
共 8 条
[1]  
ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, P297
[2]   DESIGN OF GUNN DEVICES FOR CW OPERATION [J].
BECKER, R ;
BOSCH, BG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :615-+
[3]   RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS [J].
BRADY, DP ;
KNIGHT, S ;
LAWLEY, KL ;
UENOHARA, M .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1497-+
[4]  
Carslaw H. S., 1959, CONDUCTION HEAT SOLI
[5]   HEAT FLOW IN N++-N-N+ EPITAXIAL GAAS BULK EFFECT DEVICES [J].
KNIGHT, S .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :112-&
[6]   THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J].
MAYCOCK, PD .
SOLID-STATE ELECTRONICS, 1967, 10 (03) :161-&
[7]  
MOSEKILDE E, TO BE PUBLISHED
[8]   THERMAL CONDUCTIVITY OF MGO, AL2O3, MGAL2O4, AND FE3O4 CRYSTALS FROM 3 DEGREES TO 300 DEGREES K [J].
SLACK, GA .
PHYSICAL REVIEW, 1962, 126 (02) :427-&