APPLICATION OF METHOD OF TIGHT BINDING TO CALCULATION OF ENERGY BAND STRUCTURES OF DIAMOND, SILICON, AND SODIUM CRYSTALS

被引：101
作者：
CHANEY, RC
LIN, CC
LAFON, EE
机构：
来源：
PHYSICAL REVIEW B | 1971年 / 3卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.3.459
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：459 / &
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