ETCHING SILICON WITH FLUORINE-GAS

被引：26

作者：

CHEN, M

MINKIEWICZ, VJ

LEE, K

机构：

[1] IBM Research Laboratory, San Jose

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 11期

关键词：

integrated circuits; semiconductor;

D O I：

10.1149/1.2128831

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The feasibility of using fluorine gas to etch silicon for fabricating microcircuits has been studied. A long induction period is observed prior to etching. The induction period is probably related to the quality and thickness of the oxide layer. Etch rates (for Pf2 ~ 2 Torr) of ~90 and ~5000 A/min are observed at 50° and 220°C, respectively. The reaction probability for F2 on silicon is 4 × 10~6 at room temperature. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1946 / 1948

页数：3

共 6 条

[1]

ABE H, 1975, J JPN SOC APPL PHY S, V44, P288

[2]

COBURN JW, J APPL PHYS

[3] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].