NATURE OF RADIATION DEFECTS IN N-TYPE SILICON IRRADIATED WITH ELECTRONS OF ENERGY CLOSE TO THE DEFECT FORMATION THRESHOLD

被引：0

作者：

BERMAN, LS

ZHEPKO, VA

LOMASOV, VN

TKACHENKO, VN

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 12期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1318 / 1320

页数：3

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[1] RATE OF INTRODUCTION AND CONCENTRATION PROFILE OF A CENTERS IN N-TYPE SILICON IRRADIATED WITH ELECTRONS OF ENERGY CLOSE TO THE DEFECT-FORMATION THRESHOLD
BERMAN, LS
VITOVSKII, NA
VORONKOV, VB
LOMASOV, VN
REMENYUK, AD
TKACHENKO, VN
TOLSTOBROV, MG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04): : 475 - 477
[2] INFLUENCE OF AN ELECTRIC-FIELD ON THE PROFILE OF THE CONCENTRATION OF RADIATION DEFECTS IN SILICON IRRADIATED WITH ELECTRONS OF ENERGIES CLOSE TO THE DEFECT-FORMATION THRESHOLD
BERMAN, LS
VITOVSKII, NA
VORONKOV, VB
LOMASOV, VN
TKACHENKO, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (07): : 765 - 767
[3] FORMATION OF RADIATION DEFECTS IN N-TYPE SILICON BY IRRADIATION WITH 1.2 GEV ELECTRONS
KASILOV, VI
LUGAKOV, PF
MASLOV, NI
FILIPPOV, IM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 969 - 970
[4] ANNEALING OF DEFECTS IN QUENCHED N-TYPE SILICON IRRADIATED WITH FAST ELECTRONS
BEREZINA, GM
KORSHUNOV, FP
RAINES, LY
INORGANIC MATERIALS, 1979, 15 (07) : 895 - 897
[5] RADIATION DEFECTS IN N-TYPE SILICON IRRADIATED WITH ALPHA-PARTICLES
GUBSKAYA, VI
ZVYAGIN, VI
KUCHINSKII, PV
LOMAKO, VM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (01): : 97 - 99
[6] ORIENTATION DEPENDENCE OF THE FORMATION OF RADIATION DEFECTS IN N-TYPE SILICON
KRYUKOVA, IV
VAVILOV, VS
SOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 266 - 267
[7] INFLUENCE OF IRRADIATION TEMPERATURE AND OF NATURE OF DOPANT ON FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON
VAVILOV, VS
GLAZMAN, VB
ISAEV, NU
MUKASHEV, BN
SPITSYN, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 303 - 305
[8] INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.
Vavilov, V.S.
Glaxman, V.B.
Isaev, N.U.
Mukashev, B.N.
Spitsyn, A.V.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 303 - 305
[9] QUANTITATIVE ESTIMATES OF THE PARAMETERS OF RADIATION DEFECT FORMATION IN N-TYPE SILICON
BARANOV, AI
VASILEV, AV
KOMOLOVA, NI
SMAGULOVA, SA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (09): : 1058 - 1060
[10] THE NATURE OF INTRINSIC DEFECTS IN N-TYPE SILICON GAMMA-IRRADIATED AT 77 K
MARKEVICH, VP
MURIN, LI
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (02): : K151 - K155

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