EFFECTS OF BACKSPUTTERING AND AMORPHOUS-SILICON CAPPING LAYER ON THE FORMATION OF TISI2 IN SPUTTERED TI FILMS ON (001)SI BY RAPID THERMAL ANNEALING

被引:44
作者
CHEN, LJ
WU, IW
CHU, JJ
NIEH, CW
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
[2] CALTECH,KECK LAB MAT SCI,PASADENA,CA 91125
关键词
D O I
10.1063/1.340977
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2778 / 2782
页数:5
相关论文
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