EFFECTS OF BACKSPUTTERING AND AMORPHOUS-SILICON CAPPING LAYER ON THE FORMATION OF TISI2 IN SPUTTERED TI FILMS ON (001)SI BY RAPID THERMAL ANNEALING

被引：44

作者：

CHEN, LJ

WU, IW

CHU, JJ

NIEH, CW

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[2] CALTECH,KECK LAB MAT SCI,PASADENA,CA 91125

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.340977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2778 / 2782

页数：5

共 16 条

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