STRESS AND SOURCE CONDITIONS OF DC MAGNETRON-SPUTTERED NB FILMS

被引:24
作者
AMOS, RS
BREYER, PE
HUANG, HH
LICHTENBERGER, AW
机构
[1] University of Virginia, Department of Electrical Engineering, Superconductive Device Laboratory
基金
美国国家科学基金会;
关键词
D O I
10.1109/77.403051
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied the quality of Nb films from two different DC magnetron sources in a vein similar to previous work at Fujitsu Laboratories and NIST. In particular we are interested in the effects of target erosion on Nb films quality and on operating conditions of the magnetron sources, We find that the concept of a current-pressure (I-P) stress line of constant voltage (NIST), though giving qualitative guidance on proper source operating conditions, is not a sufficiently accurate model to set either of our magnetron source conditions over the life of the targets. In particular we find that: (1) the shape of our I-P ''lines'' change with target usage, (2) the stress values attributed to different points on a given I-P line at one ''snapshot'' in the target Life are often different, and (3) the stress attributed to a given point on an I-P line may change over the life of a target. Alternative source operation strategies for maintaining stress free films will be discussed and the influence of other parameters including temperature, substrate material, source distance, substrate motion and target to target repeatability will also be examined.
引用
收藏
页码:2326 / 2329
页数:4
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