THEORY OF TEMPERATURE AND INTENSITY DEPENDENCE OF PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS

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DOHLER, GH
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JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
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页码：115 / 118
页数：4
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共 5 条
[1]  
BEYER W, AMORPH LIQU SEMICOND
[2]   CONDUCTIVITY, THERMOPOWER, AND STATISTICAL SHIFT IN AMORPHOUS-SEMICONDUCTORS [J].
DOHLER, GH .
PHYSICAL REVIEW B, 1979, 19 (04) :2083-2091
[3]   CONDUCTIVITY AND THERMOPOWER NEAR THE BAND EDGE IN NON-POLARONIC AMORPHOUS-SEMICONDUCTORS - THEORY AND ANALYSIS [J].
DOHLER, GH .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :363-368
[4]  
Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[5]   PHOTO AND DARK CONDUCTIVITY OF DOPED AMORPHOUS SILICON [J].
REHM, W ;
FISCHER, R ;
STUKE, J ;
WAGNER, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02) :539-547
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