EVALUATION OF INTERFACE STATES IN MOS STRUCTURES BY DLTS WITH A BIPOLAR RECTANGULAR WEIGHTING FUNCTION

被引：20

作者：

TOKUDA, Y ^{[1
]}

HAYASHI, M ^{[1
]}

USAMI, A ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 05期

关键词：

D O I：

10.1088/0022-3727/14/5/021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：895 / 898

页数：4

共 9 条

[1] DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS [J].

DAY, DS ;

TSAI, MY ;

STREETMAN, BG ;

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5093-5098

[2] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :802-804

[3] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J].

KIMERLING, LC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1497-1505

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5] CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS [J].

MILLER, GL ;

RAMIREZ, JV ;

ROBINSON, DAH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2638-2644

[6] TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES [J].

SCHULZ, M ;

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :622-625

[7] EVIDENCE FOR MULTIPHONON EMISSION FROM INTERFACE STATES IN MOS STRUCTURES [J].

SCHULZ, M ;

JOHNSON, NM .

SOLID STATE COMMUNICATIONS, 1978, 25 (07) :481-484

[8] STUDIES OF NEUTRON-PRODUCED DEFECTS IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

TOKUDA, Y ;

SHIMIZU, N ;

USAMI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) :309-315

[9] DEEP LEVEL TRANSIENT SPECTROSCOPY OF BULK TRAPS AND INTERFACE STATES IN SI MOS DIODES [J].

YAMASAKI, K ;

YOSHIDA, M ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (01) :113-122

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