ELECTRON-BEAM NANOLITHOGRAPHY WITH IMAGE REVERSAL BY ECR PLASMA OXIDATION

被引：8

作者：

KURIHARA, K

IWADATE, K

NAMATSU, H

NAGASE, M

MURASE, K

机构：

[1] NTT LSI Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00071-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new image-reversal process had been developed for electron beam nanolithography. This process is based on Si oxidation with ECR oxygen plasma through openings in resist patterns. Si on SiO2 is selectively etched by either Cl2-based ECR plasma etching or KOH anisotropic etching. This image-reversal process achieves 10-nm-scale Si line and dot patterns.

引用

页码：125 / 128

页数：4

共 5 条

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