DETERMINATION OF THE STATE OF DEFORMATION IN EPITAXIAL LAYERS USING X-RAY-DIFFRACTION

被引：0

作者：

DUGDALE, PJ ^{[1
]}

BARNETT, SJ ^{[1
]}

POND, RC ^{[1
]}

EMENY, M ^{[1
]}

机构：

[1] DRA,MALVERN,WORCS,ENGLAND

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The state of deformation in epitaxial layers of InGaAs grown by MBE on GaAs substrates has been determined using X-ray diffraction. This method enables the strains and rigid rotations which have occurred in the layers to be measured, and these are described by means of a tenser. Layers of different thicknesses have been grown on substrates exhibiting low and high dislocation density in order to assess the influence of this parameter on layer relaxation.

引用

页码：589 / 592

页数：4