Synthesis of SiOC(-H) Films by the Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Method

Synthesis of SiOC(E1) films outside generation regions using afterglow plasma under atmospheric pressure have been gaining attention because it allows deposition to complex configuration substrates with large area. We synthesized SiOC(E1) films at different oxygen gas flow rates and substrate temperatures by the atmospheric pressure plasma enhanced chemical vapor deposition method from TrMS/02/He gases. Substrates were placed at a working distance of 10 mm between discharge electrode and substrate surface. Plasma emission is gradually weakened with an increase in oxygen gas flow rate, and excessive introduction of oxygen into the process caused the plasma to disappear. The SiOC(E1) films were composed of a number of particles; Their large size particles lead to an increasing deposition rate and the non -dense structure of the films. As the oxygen gas flow rate increased, the particle size was larger at 100 nm and related -OH peaks strongly observed. Carbon content of SiOC(E1) films decreased from 17% to only 1.8% with an increase in substrate temperature at 140 degrees C. In this paper, we report the characterization of SiOC(E1) films synthesized under atmospheric pressure PECVD method.