DEPTH PROFILE ANALYSIS OF THE C/SI INTERFACE - COMPARISON OF DESTRUCTIVE AND NONDESTRUCTIVE TECHNIQUES

被引：9

作者：

ZEHRINGER, R

HAUERT, R

机构：

[1] Swiss Federal Laboratories for Materials Testing and Research, EMPA

来源：

SURFACE SCIENCE | 1992年 / 262卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(92)90455-F

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The carbon/silicon interface has been investigated by photoelectron spectroscopy comparing two different depth profiling techniques. While the nondestructive angle-resolved photoelectron spectroscopy on thermally evaporated carbon on silicon shows no interface reactions, the same sample analyzed by standard sputter depth profiling revealed a pronounced interface consisting of a silicon carbide compound. The formation of SiC is found to be caused by the impinging energetic ions during sputtering.

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页码：21 / 24

页数：4

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