FABRICATION OF A GATED GALLIUM-ARSENIDE HETEROSTRUCTURE RESONANT TUNNELING DIODE

被引：20

作者：

KINARD, WB ^{[1
]}

WEICHOLD, MH ^{[1
]}

KIRK, WP ^{[1
]}

机构：

[1] TEXAS A&M UNIV SYST,DEPT PHYS,COLLEGE STN,TX 77843

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：393 / 396

页数：4

共 7 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[2] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

[3] PREFERENTIAL ETCHING OF GAAS THROUGH PHOTORESIST MASKS [J].

OTSUBO, M ;

ODA, T ;

KUMABE, H ;

MIKI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :676-680

[4] ON THE MECHANISM AND FREQUENCY LIMIT OF DOUBLE-BARRIER QUANTUM-WELL STRUCTURES [J].

PAN, DS ;

MENG, CC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2082-2084

[5] REALIZATION OF A 3-TERMINAL RESONANT TUNNELING DEVICE - THE BIPOLAR QUANTUM RESONANT TUNNELING TRANSISTOR [J].

REED, MA ;

FRENSLEY, WR ;

MATYI, RJ ;

RANDALL, JN ;

SEABAUGH, AC .

APPLIED PHYSICS LETTERS, 1989, 54 (11) :1034-1036

[6]

YOST DJ, IN PRESS

[7]

YOST DJ, 1989, THESIS TEXAS A M U

← 1 →