VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS ON (100) INP SUBSTRATE

被引：19
作者：
SUSA, N
YAMAUCHI, Y
ANDO, H
KANBE, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 01期
关键词：
D O I：
10.1143/JJAP.19.L17
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L17 / L20
页数：4
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