INGAASP-INP PHOTO-DIODES ANTI-REFLECTIVELY COATED WITH INP NATIVE OXIDE

被引：8

作者：

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

AOKI, T ^{[1
]}

TOBE, M ^{[1
]}

AMEMIYA, Y ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 10期

关键词：

D O I：

10.1109/JQE.1979.1069909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Usefulness of the anodically grown native oxide film in InP surface is demonstrated as an antireflection coating of InGaAsP/lnP DH photodiodes. The reflection of the InP is 30 percent, while that with coating is 2.8 percent in the wavelength region considered. The quantum efficiencies of 64 percent for the uncoated diode and 82 percent for the coated one were obtained. Some important optical properties of the anodically oxidized film are also measured. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1077 / 1079

页数：3

共 7 条

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