CARRIER TRANSPORT MODELING IN THE INVERSION LAYER OF SUBMICRON SEMICONDUCTOR-DEVICES

State of‐the‐art semiconductor devices are characterized nowadays by dimensions which are well into the submicron range. As a result, the physical models describing carrier transport in these devices need to be modified to be able to account for phenomena such as hot electron or quantum effects, which are intrinsic to this size regime. In this paper we present a formalism which, starting from a self‐consistent solution of Schrodinger's and Poisson's equations in terms. of semi‐analytical wavefunctions, leads to a system of quantum balance equations. It is expected that, as well as supplying a more accurate description of the abovementioned effects, the resulting models will not be computationally expensive and therefore amenable to implementation in a device simulator. Copyright © 1990 John Wiley & Sons, Ltd.