THE MULTIPLE-TUNNEL JUNCTION AND ITS APPLICATION TO SINGLE-ELECTRON MEMORY AND LOGIC-CIRCUITS

被引：30

作者：

NAKAZATO, K ^{[1
]}

AHMED, H ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

SINGLE ELECTRON; MEMORY; LOGIC; SEMICONDUCTOR; TUNNEL JUNCTION;

D O I：

10.1143/JJAP.34.700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The multiple-tunnel junction (MTJ) produced by forming a side-gated constriction in delta-doped GaAs is demonstrated as a basic component of single electronics. A single-electron memory cell, in which one bit of information is represented by the excess or lack of a precise number of electrons, was fabricated and the operation was confirmed at liquid helium temperature. A new switching element, the variable-barrier MTJ, and a new circuit, the single-charge injection logic circuit, are proposed.

引用

页码：700 / 706

页数：7

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