THE MULTIPLE-TUNNEL JUNCTION AND ITS APPLICATION TO SINGLE-ELECTRON MEMORY AND LOGIC-CIRCUITS

被引:30
|
作者
NAKAZATO, K [1 ]
AHMED, H [1 ]
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR,CAMBRIDGE CB3 0HE,ENGLAND
关键词
SINGLE ELECTRON; MEMORY; LOGIC; SEMICONDUCTOR; TUNNEL JUNCTION;
D O I
10.1143/JJAP.34.700
中图分类号
O59 [应用物理学];
学科分类号
摘要
The multiple-tunnel junction (MTJ) produced by forming a side-gated constriction in delta-doped GaAs is demonstrated as a basic component of single electronics. A single-electron memory cell, in which one bit of information is represented by the excess or lack of a precise number of electrons, was fabricated and the operation was confirmed at liquid helium temperature. A new switching element, the variable-barrier MTJ, and a new circuit, the single-charge injection logic circuit, are proposed.
引用
收藏
页码:700 / 706
页数:7
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