THE MULTIPLE-TUNNEL JUNCTION AND ITS APPLICATION TO SINGLE-ELECTRON MEMORY AND LOGIC-CIRCUITS

被引：30
|
作者：
NAKAZATO, K [1 ]
AHMED, H [1 ]
机构：
[1] UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR,CAMBRIDGE CB3 0HE,ENGLAND
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期
关键词：
SINGLE ELECTRON; MEMORY; LOGIC; SEMICONDUCTOR; TUNNEL JUNCTION;
D O I：
10.1143/JJAP.34.700
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The multiple-tunnel junction (MTJ) produced by forming a side-gated constriction in delta-doped GaAs is demonstrated as a basic component of single electronics. A single-electron memory cell, in which one bit of information is represented by the excess or lack of a precise number of electrons, was fabricated and the operation was confirmed at liquid helium temperature. A new switching element, the variable-barrier MTJ, and a new circuit, the single-charge injection logic circuit, are proposed.
引用
收藏
页码：700 / 706
页数：7
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