INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS

被引：90

作者：

BAUR, J

MAIER, K

KUNZER, M

KAUFMANN, U

SCHNEIDER, J

AMANO, H

AKASAKI, I

DETCHPROHM, T

HIRAMATSU, K

机构：

[1] MEIJO UNIV,DEPT ELECT & ELECTR ENGN,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN

[2] NAGOYA UNIV,SCH ENGN,DEPT ELECTR,CHIKUSA KU,NAGOYA,AICHI 46801,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.111003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A characteristic infrared luminescence band, dominated by a zero-phonon line at 1.30 eV has been consistently detected in gallium nitride (GaN) epitaxial layers. It is assigned to the intra-3d-shell transitions T-4(1)(G)-->(6)A(1)(S) of omnipresent iron trace impurities, Fe-Ga(3+)(3d(5)). Another infrared emission is often also observed at 1.19 eV. This is tentatively assigned to chromium trace impurities, Cr-Ga(4+)(3d(2)). The role of iron and chromium as minority-carrier lifetime killers in GaN-based optoelectronic devices is suggested from these data.

引用

页码：857 / 859

页数：3

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