A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates

被引：8
作者：
Kim, Jin-Seob [1 ]
Kim, Yu-Mi [1 ]
Jeong, Kwang-Seok [1 ]
Yun, Ho-Jin [1 ]
Yang, Seung-Dong [1 ]
Kim, Seong-Hyeon [1 ]
An, Jin-Un [1 ]
Ko, Young-Uk [1 ]
Lee, Ga-Won [1 ]
机构：
[1] Chungnam Natl Univ, Dept Elect Engn, Deajeon 305764, South Korea
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2014年 / 15卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
a-IGZO; Light stress mechanism; Oxygen vacancy; Negative-U center;
D O I：
10.4313/TEEM.2014.15.6.315
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (VTH) under illumination with/without the gate bias, and the amount of shift in VTH is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in VTH under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.
引用
收藏
页码：315 / 319
页数：5
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