PHOTOEFFECTS IN NONUNIFORMLY IRRADIATED P-N JUNCTIONS

被引：193

作者：

LUCOVSKY, G

机构：

来源：

关键词：

D O I：

10.1063/1.1735750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1088 / 1095

页数：8

共 9 条

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[3]

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RITTNER ES, 1956, 1954 PHOT C

[5] NARROW BASE GERMANIUM PHOTODIODES [J].

SAWYER, DE ;

REDIKER, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1122-1130

[6]

SCHOCKLEY W, 1950, ELECTRONS HOLES SEMI

[7]

VANDERZIEL A, 1957, SOLID STATE PHYSICAL

[8] A NEW SEMICONDUCTOR PHOTOCELL USING LATERAL PHOTOEFFECT [J].

WALLMARK, JT .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (04) :474-483

[9]

WOLFENDALE E, 1958, JUNCTION TRANSISTOR