STRUCTURE CONTROL OF GAN FILMS GROWN ON (001) GAAS SUBSTRATES BY GAAS SURFACE PRETREATMENTS

被引：79

作者：

FUJIEDA, S ^{[1
]}

MATSUMOTO, Y ^{[1
]}

机构：

[1] NEC CORP LTD, FUNDAMENTAL RES LABS, TSUKUBA, IBARAKI 305, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9B期

关键词：

GALLIUM NITRIDE; GALLIUM ARSENIDE; SURFACE NITRIDATION; CRYSTAL STRUCTURE;

D O I：

10.1143/JJAP.30.L1665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two types of cubic and hexagonal GaN films were deposited on (001) GaAs substrates. The film structure proved to be controlled by GaAs pretreatments. By performing a N2H4 (hydrazine) pretreatment of GaAs substrates, the GaN films, which were otherwise hexagonal similarly to ordinary films on sapphire substrates, became cubic. A surface cubic nitride layer was found to be formed on the pretreated GaAs by a RHEED (reflection high-energy electron diffraction) observation, which is thought to be the substantial substrate for the following growth of a cubic GaN film.

引用

页码：L1665 / L1667

页数：3

共 9 条

[1] INTERFACIAL SUPERSTRUCTURE OF AIN/N-GAAS(001) SYSTEM FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

AKIMOTO, K ;

HIROSAWA, I ;

MIZUKI, J ;

FUJIEDA, S ;

MATSUMOTO, Y ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1401-L1403

[2] FORMATION OF ALUMINUM NITRIDE FILMS ON GAAS(110) AT ROOM-TEMPERATURE BY REACTIVE MOLECULAR-BEAM EPITAXY - X-RAY AND SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY [J].

BAIER, HU ;

MONCH, W .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) :586-590

[3] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND X-RAY STUDIES OF A1N FILMS GROWN ON SI(111) AND SI(001) BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

CHUBACHI, Y ;

SATO, K ;

KOJIMA, K .

THIN SOLID FILMS, 1984, 122 (03) :259-270

[4] CONTROL OF THE ELECTRICAL-PROPERTIES OF ALN/THIN-A-SI/GAAS MIS DIODES BY GAAS SURFACE PRETREATMENTS [J].

FUJIEDA, S ;

MOCHIZUKI, Y ;

AKIMOTO, K ;

HIROSAWA, I ;

MATSUMOTO, Y ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (02) :L364-L367

[5] IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF THE AIN GAAS MIS SYSTEM AND THEIR THERMAL-STABILITY BY GAAS SURFACE STOICHIOMETRY CONTROL [J].

FUJIEDA, S ;

MIZUTA, M ;

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03) :L296-L299

[6] GROWTH-CHARACTERIZATION OF LOW-TEMPERATURE MOCVD GAN - COMPARISON BETWEEN N2H4 AND NH3 [J].

FUJIEDA, S ;

MIZUTA, M ;

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (12) :2067-2071

[7]

FUJIEDA S, 1989, SOLID STATE ELECTR S, V33, P233

[8] LOW-TEMPERATURE GROWTH OF GAN AND ALN ON GAAS UTILIZING METALORGANICS AND HYDRAZINE [J].

MIZUTA, M ;

FUJIEDA, S ;

MATSUMOTO, Y ;

KAWAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L945-L948

[9] NITRIDE LAYERS ON GAAS(110) SURFACES [J].

TROOST, D ;

BAIER, HU ;

BERGER, A ;

MONCH, W .

SURFACE SCIENCE, 1991, 242 (1-3) :324-330

← 1 →