RECRYSTALLIZATION OF POLYCRYSTALLINE CVD GROWN SILICON

被引：22

作者：

SCHINS, WJH

BEZEMER, J

HOLTROP, H

RADELAAR, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 05期

关键词：

D O I：

10.1149/1.2129846

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1193 / 1199

页数：7

共 13 条

[1]

Christian JW, 1975, THEORY TRANSFORMATIO

[2]

Cullity B.D, 1959, XRAY DIFFRACTION, Vsecond

[3]

DAEYOUWENS C, 1975, APPL PHYS LETT, V26, P569, DOI 10.1063/1.87995

[4]

Fischer H., 1977, Proceedings of the International Conference on Photovoltaic Solar Energy, P52

[5]

HAESSNER F, 1970, SEMINAR I METALLKUND

[6] SURFACE ENERGY OF GERMANIUM AND SILICON [J].

JACCODINE, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :524-527

[7] STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI ;

CASS, TR .

THIN SOLID FILMS, 1973, 16 (02) :147-165

[8] SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J].

MASTERS, BJ ;

FAIRFIELD, JM .

APPLIED PHYSICS LETTERS, 1966, 8 (11) :280-+

[9] THE EFFECT OF THERMAL GROOVING ON GRAIN BOUNDARY MOTION [J].

MULLINS, WW .

ACTA METALLURGICA, 1958, 6 (06) :414-427

[10] GROWTH TEXTURE OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

PRATT, B ;

KULKARNI, S ;

POPE, DP ;

GRAHAM, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1760-1762

← 1 2 →