STRAINED MULTIPLE QUANTUM-WELL LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

Low-threshold and high-output power of the first InGaAsP/InP graded index strained multiple quantum well lasers emitting near 1.3-mu-m wavelength is reported. A continuous wave threshold current of 10 mA and a quantum efficiency of 60% with maximum output power of 100 mW/facet is observed in uncoated lasers having compressively strained InGaAsP quantum wells. With high reflectivity on both facets, a reduced threshold current as low as 3.5 mA is observed. Highest output power of 250 mW was observed in lasers with antireflection-high reflection coating configuration operating at 10-degrees-C. The improved performance of the lasers is attributed to both the reduced internal absorption loss (6 cm-1) and the suppressed nonradiative recombination in the structure.