PULSED ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON

被引：5

作者：

INADA, T

SUGIYAMA, T

OKANO, N

ISHIKAWA, Y

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 02期

关键词：

D O I：

10.1049/el:19800041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：54 / 55

页数：2

共 10 条

[1]

BILLINGTON DS, 1962, RAD DAMAGE SOLIDS

[2]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[3] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[4] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J].

INADA, T ;

TOKUNAGA, K ;

TAKA, S .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :546-548

[5] DOPING PROFILES IN ZN-IMPLANTED GAAS AFTER LASER ANNEALING [J].

INADA, T ;

KATO, S ;

MAEDA, Y ;

TOKUNAGA, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :6000-6002

[6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J].

KAMINS, TI ;

ROSE, PH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1308-1311

[7] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J].

MCMAHON, RA ;

AHMED, H .

ELECTRONICS LETTERS, 1979, 15 (02) :45-47

[8] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J].

REGOLINI, JL ;

SIGMON, TW ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :114-116

[9]

WHITE CW, 1978, NOV P LAS SOL INT LA

[10]

Wolf H. F, 1969, SILICON SEMICONDUCTO

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