DESIGN AND EVALUATION OF A PLANAR GAALAS-GAAS BIPOLAR-TRANSISTOR

被引：13

作者：

ANKRI, D

SCAVENNEC, A

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 01期

关键词：

D O I：

10.1049/el:19800032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：41 / 42

页数：2

共 8 条

[1]

ANKRI D, 1978, PLANAR GAALAS GAAS H

[2] HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR [J].

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MISCHEL, P ;

SCHUL, G .

ELECTRONICS LETTERS, 1976, 12 (16) :395-396

[3]

CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[4] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J].

DUMKE, WP ;

WOODALL, JM ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1339-+

[5] MEASUREMENT OF EMITTER AND COLLECTOR SERIES RESISTANCES [J].

GIACOLETTO, LJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :692-+

[6] (GAAL)AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS WITH HIGH-CURRENT GAIN [J].

KONAGAI, M ;

KATSUKAWA, K ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4389-4394

[7] AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MILANO, RA ;

WINDHORN, TH ;

ANDERSON, ER ;

STILLMAN, GE ;

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :562-564

[8]

ROSS PW, 1977, ELECTRON ENG, V3, P35

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