RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON

被引：192

作者：

BERMEJO, D ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1979年 / 32卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(79)90085-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Stokes Raman spectra of pure and hydrogenated amorphous germanium and silicon are discussed. First- and second-order structures due to the vibration of GeGe and SiSi bonds and also first-order structures due to GeH and SiH bonds are observed. The resonance behaviour and the polarization ratio of the observed structures are presented and interpreted in terms of a dielectric constant-bond polarizability model. © 1979.

引用

页码：405 / 419

页数：15

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