MODELING BASE RESISTANCE OF A BIPOLAR JUNCTION TRANSISTOR

被引：0

作者：

JAIN, LC

GARUD, GN

机构：

来源：

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 1978年 / 32卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：450 / 452

页数：3

共 11 条

[1] SWITCHING PROPERTIES OF EPITAXIAL PLANAR TRANSISTORS OPERATING IN SATURATION [J].

BHATTACHARYYA, AB ;

SRIVASTAVA, A ;

KUMAR, R .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :277-286

[2] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J].

EBERS, JJ ;

MOLL, JL .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12) :1761-1772

[3]

FOSSUM JG, 1973, T IEEE ED, V20, P582

[4]

GARUD GN, UNPUBLISHED

[5] AN INTEGRAL CHARGE CONTROL MODEL OF BIPOLAR TRANSISTORS [J].

GUMMEL, HK ;

POON, HC .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (05) :827-+

[6]

HAUSER JR, 1964, T IEEE ED, V11, P238

[7] ASSESSING MODEL ADEQUACY AND SELECTING MODEL COMPLEXITY IN INTEGRATED-CIRCUIT SIMULATION [J].

LINDHOLM, FA ;

DIRECTOR, SW ;

BOWLER, DL .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1971, SC 6 (04) :213-+

[8]

LINVILL J, 1961, TRANSISTORS ACTIVE C

[9] UNIFIED APPROACH TO BASE WIDENING MECHANISMS IN BIPOLAR-TRANSISTORS [J].

REY, G ;

DUPUY, F ;

BAILBE, JP .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :863-866

[10]

WHITTER RJ, 1969, T IEEE ED, V16, P39

← 1 2 →