CRITICAL LAYER THICKNESS FOR MISFIT DISLOCATION STABILITY IN MULTILAYER STRUCTURES

被引:91
作者
HIRTH, JP
FENG, XX
机构
[1] Department of Mechanical and Materials Engineering, Washington State University, Pullman
关键词
D O I
10.1063/1.345371
中图分类号
O59 [应用物理学];
学科分类号
摘要
The critical thickness for which the injection of misfit dislocations into a strained layer becomes thermodynamically favorable is treated in a Volterra dislocation model. Both a single interior layer and a multilayer (superlattice) case are considered. The results agree with earlier simple dipole predictions in the limit of large misfit dislocation spacing, but deviate at smaller spacings. With a particular core parameter, the results also agree with atomistic calculations using a parabolic potential for a constrained glide equilibrium case.
引用
收藏
页码:3343 / 3349
页数:7
相关论文
共 19 条
[1]   ON THE HIERARCHY OF INTERFACIAL DISLOCATION-STRUCTURE [J].
BALLUFFI, RW ;
OLSON, GB .
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1985, 16 (04) :529-541
[2]   RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].
DODSON, BW ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327
[3]  
ESAKI L, 1970, IBM J RES DEV, V14, P686
[4]   ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225
[5]   ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216
[6]   STRESS FIELDS OF UNIFORMLY SPACED, INFINITE EDGE DISLOCATION ARRAYS IN A SEMI-INFINITE, ISOTROPIC SOLID [J].
HARTLEY, CS .
SCRIPTA METALLURGICA, 1969, 3 (09) :607-&
[7]  
Hirth J. P., 1986, South African Journal of Physics, V9, P72
[8]  
Hirth J P, 1982, THEORY DISLOCATIONS, P91
[9]   DAMAGE OF COHERENT MULTILAYER STRUCTURES BY INJECTION OF DISLOCATIONS OR CRACKS [J].
HIRTH, JP ;
EVANS, AG .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2372-2376
[10]   GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].
MAREE, PMJ ;
BARBOUR, JC ;
VANDERVEEN, JF ;
KAVANAGH, KL ;
BULLELIEUWMA, CWT ;
VIEGERS, MPA .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4413-4420