SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME

被引：135

作者：

IRENE, EA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 10期

关键词：

D O I：

10.1149/1.2131277

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1708 / 1714

页数：7

共 29 条

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[19] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS [J].

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[20] NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE [J].

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