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SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME
被引:134
作者
:
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
IRENE, EA
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1978年
/ 125卷
/ 10期
关键词
:
D O I
:
10.1149/1.2131277
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1708 / 1714
页数:7
相关论文
共 29 条
[1]
ALESSANDRINI EI, RC4844 IBM REP
[2]
[Anonymous], 1972, COLLOID SURFACE CHEM, V31, P578
[3]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[4]
EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
ELDRIDGE, JM
论文数:
0
引用数:
0
h-index:
0
ELDRIDGE, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(10)
: 1287
-
+
[5]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[6]
A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON
FINNE, RM
论文数:
0
引用数:
0
h-index:
0
FINNE, RM
KLEIN, DL
论文数:
0
引用数:
0
h-index:
0
KLEIN, DL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
: 965
-
&
[7]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[8]
GREGG SJ, 1976, SURF COLLOID SCI, V9, pCH4
[9]
THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
HOPPER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
HOPPER, MA
CLARKE, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
CLARKE, RA
YOUNG, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
YOUNG, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
: 1216
-
1222
[10]
GAS PERMEATION STUDY AND IMPERFECTION DETECTION OF THERMALLY GROWN AND DEPOSITED THIN SILICON DIOXIDE FILMS
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
MORRISON, RE
论文数:
0
引用数:
0
h-index:
0
MORRISON, RE
SANDOR, JE
论文数:
0
引用数:
0
h-index:
0
SANDOR, JE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(03)
: 221
-
226
←
1
2
3
→
共 29 条
[1]
ALESSANDRINI EI, RC4844 IBM REP
[2]
[Anonymous], 1972, COLLOID SURFACE CHEM, V31, P578
[3]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 760
-
+
[4]
EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
CHOU, NJ
ELDRIDGE, JM
论文数:
0
引用数:
0
h-index:
0
ELDRIDGE, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(10)
: 1287
-
+
[5]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[6]
A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON
FINNE, RM
论文数:
0
引用数:
0
h-index:
0
FINNE, RM
KLEIN, DL
论文数:
0
引用数:
0
h-index:
0
KLEIN, DL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
: 965
-
&
[7]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[8]
GREGG SJ, 1976, SURF COLLOID SCI, V9, pCH4
[9]
THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
HOPPER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
HOPPER, MA
CLARKE, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
CLARKE, RA
YOUNG, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
YOUNG, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
: 1216
-
1222
[10]
GAS PERMEATION STUDY AND IMPERFECTION DETECTION OF THERMALLY GROWN AND DEPOSITED THIN SILICON DIOXIDE FILMS
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
MORRISON, RE
论文数:
0
引用数:
0
h-index:
0
MORRISON, RE
SANDOR, JE
论文数:
0
引用数:
0
h-index:
0
SANDOR, JE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(03)
: 221
-
226
←
1
2
3
→