EFFECTS OF V/III RATIO ON SI-DOPING IN INGAAS LATTICE-MATCHED TO INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：3

作者：

YOO, JB ^{[1
]}

KIM, JS ^{[1
]}

JANG, DH ^{[1
]}

KOAK, BH ^{[1
]}

OH, DK ^{[1
]}

KIM, HM ^{[1
]}

LEE, YT ^{[1
]}

机构：

[1] ELECT & TELECOMMUN RES INST,MAT CHARACTERIZAT SECT,DAEJON,SOUTH KOREA

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90245-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effects of the V/III ratio on Si-doping characteristics in InGaAs lattice-matched to InP were studied using organometallic vapor phase epitaxy (OMVPE). As the V/III ratio decreases from 81 to 2.5, an increase in the carrier density from 2.7 x 10(16) to 8.2 x 10(16) cm-3 is observed. A secondary ion mass spectrometry (SIMS) profile shows that the increase in the carrier density is due to an increase in Si concentration in the InGaAs epitaxial layer. Incorporation kinetics of Si plays an important role in Si doping of InGaAs and V/III ratio makes an effect on the incorporation kinetics.

引用

页码：43 / 47

页数：5

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