TRANSIENT-BEHAVIOR OF THIN-FILM TRANSISTORS BASED ON NICKEL PHTHALOCYANINE

被引：33

作者：

GUILLAUD, G

BENCHAABANE, R

JOUVE, C

GAMOUDI, M

机构：

[1] Laboratoire d'Electronique des Solides, Université Claude Bernard Lyon I, 69622 Villeurbanne Cedex, 43, Boulevard du

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

ELECTRICAL PROPERTIES AND MEASUREMENTS; ELECTRONIC DEVICES; FIELD EFFECT; ORGANIC SUBSTANCES;

D O I：

10.1016/0040-6090(94)06405-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements of transient currents have been made on evaporated thin film transistors based on nickel phthalocyanine. A time delay has been observed for the establishment of the drain current. The results are consistent with the theoretical model described by Burns. A study of this delay as a function of the drain bias voltage indicates that the mobility is field dependent and that the threshold voltage is close to zero.

引用

页码：279 / 282

页数：4

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