ION-BEAM SYNTHESIS OF BURIED METALLIC AND SEMICONDUCTING SILICIDES

被引：37
作者：
MANTL, S
机构：
[1] Institut für Schicht-und lonentechnik, KFA Jülich, Postfach 19 13
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷
关键词：
D O I：
10.1016/0168-583X(93)90704-A
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A short review will be given of the progress in fabricating buried metallic and semiconducting silicides by high dose ion implantation and subsequent annealing. Emphasis is placed on the growth mechanism of buried layers during thermal annealing. A simple rule allows predictions of the growth behaviour of various compounds.
引用
收藏
页码：895 / 900
页数：6
相关论文
共 39 条
[1]   MICROSTRUCTURE OF BURIED COSI2 LAYERS FORMED BY HIGH-DOSE CO IMPLANTATION INTO (100) AND (111) SI SUBSTRATES [J].
BULLELIEUWMA, CWT ;
VANOMMEN, AH ;
VANDENHOUDT, DEW ;
OTTENHEIM, JJM ;
DEJONG, AF .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :3093-3108
[2]   EPITAXIAL-GROWTH OF TRANSITION-METAL SILICIDES ON SILICON [J].
CHEN, LJ ;
TU, KN .
MATERIALS SCIENCE REPORTS, 1991, 6 (2-3) :53-140
[3]  
COLINGE JP, 1991, SILICON INSULATOR
[4]   OPTIMUM IMPLANTATION CONDITIONS FOR ION-BEAM SYNTHESIS OF BURIED COBALT SILICIDE LAYERS IN SI(100) [J].
DEKEMPENEER, EHA ;
OTTENHEIM, JJM ;
VANDENHOUDT, DWE ;
BULLELIEUWMA, CWT ;
LATHOUWERS, EGC .
APPLIED PHYSICS LETTERS, 1991, 59 (04) :467-469
[5]   ION-BEAM SYNTHESIS OF COBALT SILICIDE - EFFECT OF IMPLANTATION TEMPERATURE [J].
DEKEMPENEER, EHA ;
OTTENHEIM, JJM ;
VANDENHOUDT, DEW ;
BULLELIEUWMA, CWT ;
LATHOUWERS, EGC .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :769-772
[6]   SEMICONDUCTING SILICIDE SILICON HETEROSTRUCTURES - GROWTH, PROPERTIES AND APPLICATIONS [J].
DERRIEN, J ;
CHEVRIER, J ;
LETHANH, V ;
MAHAN, JE .
APPLIED SURFACE SCIENCE, 1992, 56-8 :382-393
[7]   ION-BEAM SYNTHESIS OF CUBIC FESI2 [J].
DESIMONI, J ;
BERNAS, H ;
BEHAR, M ;
LIN, XW ;
WASHBURN, J ;
LILIENTALWEBER, Z .
APPLIED PHYSICS LETTERS, 1993, 62 (03) :306-308
[8]   ION-BEAM SYNTHESIS OF BURIED CRSI2 LAYERS [J].
DUDDA, C ;
MANTL, S ;
DIEKER, C ;
DOLLE, M ;
LUTH, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :764-767
[9]  
ERLEY W, 1991, SURF SCI, V248, P193
[10]   PRECIPITATE COARSENING AND CO REDISTRIBUTION AFTER ION-IMPLANTATION IN SILICON [J].
FICHTNER, PFP ;
JAGER, W ;
RADERMACHER, K ;
MANTL, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :632-636
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