DISSOCIATION OF DISLOCATIONS IN SILICON

被引：204
作者：
RAY, ILF
COCKAYNE, DJ
机构：
来源：
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1971年 / 325卷 / 1563期
关键词：
D O I：
10.1098/rspa.1971.0184
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
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页码：543 / &
相关论文
共 31 条
[1]   STACKING FAULT ENERGY IN SILICON [J].
AERTS, E ;
SIEMS, R ;
DELAVIGNETTE, P ;
AMELINCKX, S .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :3078-&
[2]  
Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4
[3]   CRYSTALLOGRAPHIC IMPERFECTIONS IN SILICON [J].
BOOKER, GR .
DISCUSSIONS OF THE FARADAY SOCIETY, 1964, (38) :298-&
[4]   OBSERVATIONS ON DISLOCATION NODES IN SILICON [J].
BOOKER, GR ;
BROWN, LM .
PHILOSOPHICAL MAGAZINE, 1965, 11 (114) :1315-&
[5]   CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].
BOOKER, GR ;
STICKLER, R .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&
[6]   METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J].
BOOKER, GR ;
STICKLER, R .
BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09) :446-&
[7]  
BROWN LM, 1964, DISCUSS FARADAY SOC, P35
[8]   INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J].
COCKAYNE, DJ ;
RAY, ILF ;
WHELAN, MJ .
PHILOSOPHICAL MAGAZINE, 1969, 20 (168) :1265-&
[9]  
COCKAYNE DJH, 1970, 7 P INT C EL MICR GR, V2, P277
[10]  
COCKAYNE DJH, 1970, THESIS OXFORD U
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