共 10 条
[1]
CHAN YJ, 1987, IEDM TECH DIG, V87
[3]
HONG WP, 1989, P INT C GAAS RELATED
[6]
HIGH-PERFORMANCE GA0.4IN0.6AS/AL0.55IN0.45AS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (02)
:657-659
[7]
MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC GALNAS/ALLNAS MODULATION-DOPED HETEROSTRUCTURES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (03)
:782-784
[8]
MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2