CONDUCTIVITY AND QUENCHED-IN DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：9

作者：

BRANZ, HM ^{[1
]}

CAPUDER, K ^{[1
]}

LYONS, EH ^{[1
]}

HAGGERTY, JS ^{[1
]}

ADLER, D ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.36.7934

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7934 / 7940

页数：7

共 19 条

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[3]

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[6]

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[7]

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[9] ELECTRONIC TRANSPORT IN DOPED AMORPHOUS-SILICON [J].

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[10] HYDROGENATED AMORPHOUS-SILICON PRODUCED BY LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SILANE [J].

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