PHONON-ASSISTED CYCLOTRON RESONANCE IN MANY-VALLEY SEMICONDUCTORS

被引：8
作者：
BAKANAS, R
LEVINSON, Y
BASS, F
机构：
来源：
PHYSICS LETTERS A | 1969年 / A 28卷 / 09期
关键词：
D O I：
10.1016/0375-9601(69)90458-7
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resonance absorption by free carriers associated with transitions between Landau levels of different valleys, assisted by inter-valley-phonon emission or absorption is considered. © 1989.
引用
收藏
页码：604 / &
相关论文
共 11 条
[1]  
Bass F. G., 1965, ZH EKSP TEOR FIZ, V49, P914
[2]  
BASS FG, 1966, SOV PHYS JETP-USSR, V22, P635
[3]   2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI [J].
DUMKE, WP .
PHYSICAL REVIEW, 1960, 118 (04) :938-939
[4]   SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J].
HARRISON, WA .
PHYSICAL REVIEW, 1956, 104 (05) :1281-1290
[5]   SELECTION RULES CONNECTING DIFFERENT POINTS IN BRILLOUIN ZONE [J].
LAX, M ;
HOPFIELD, JJ .
PHYSICAL REVIEW, 1961, 124 (01) :115-&
[6]  
LAX M, 1962, REPORT EXETER INT C, P395
[7]   SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J].
LONG, D .
PHYSICAL REVIEW, 1960, 120 (06) :2024-2032
[8]   COMBINED RESONANCE AND ELECTRON G VALUES IN INSB [J].
MCCOMBE, BD ;
BISHOP, SG ;
KAPLAN, R .
PHYSICAL REVIEW LETTERS, 1967, 18 (18) :748-&
[9]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35
[10]  
MORIN FJ, 1954, PHYS REV, V94, P1925
12