ADSORPTION OF ATOMIC-HYDROGEN ON SI(100) SURFACE

被引：50

作者：

LU, ZH ^{[1
]}

GRIFFITHS, K ^{[1
]}

NORTON, PR ^{[1
]}

SHAM, TK ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT CHEM,LONDON N6A 5B7,ONTARIO,CANADA

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.68.1343

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The interaction of atomic hydrogen (deuterium) was studied by nuclear reaction analysis and Rutherford backscattering-channeling analysis. The hydrogen coverage as a function of exposure is found to exhibit a plateau at about 2.0 monolayers. The coverage continues to increase with further exposures of atomic hydrogen (deuterium), a consequence of localized etching of the silicon surface. The channeling data show that the Si(100)-2 x 1 surface is highly strained. The strains parallel to the (100) surface are mostly removed on the "saturated" bulklike Si(100)-1 x 1-H surface.

引用

页码：1343 / 1346

页数：4

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