UNIFICATION OF THE PROPERTIES OF THE EL2 DEFECT IN GAAS

被引：30

作者：

HOINKIS, M

WEBER, ER

WALUKIEWICZ, W

LAGOWSKI, J

MATSUI, M

GATOS, HC

MEYER, BK

SPAETH, JM

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] UNIV GESAMTHSCH PADERBORN,FACHBEREICH PHYS,D-4790 PADERBORN,FED REP GER

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5538

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5538 / 5541

页数：4

共 17 条

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[4] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J].

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SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2183-2186

[5] METASTABLE STATE OF EL2 IN GAAS [J].

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LANNOO, M ;

STIEVENARD, D ;

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[6]

Gatos H. C., 1985, MATER RES SOC S P, V46, P153

[7] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[8]

KERGMANN K, 1988, 5TH P C SEM 3 5 MAT, P397

[9] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS [J].

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LIN, DG .

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[10]

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